An experimental study was made of the properties of the Si(100)/SiO2 interface, following rapid thermal processing. The interface properties were examined by using high frequency and quasi-static analyses of metal-oxide-silicon capacitor structures immediately after rapid thermal oxidation or rapid thermal annealing. The experimental results revealed a characteristic peak in the capacitance-voltage response, following dry rapid thermal oxidation and rapid thermal annealing (at above 800C), as the Fermi level at the Si(100)/SiO2 interface approached the conduction band edge. An analysis of the results revealed a high interface state density across the energy gap, following dry rapid thermal oxidation and rapid thermal annealing; with a characteristic peak density (5.5 x 1012 to 1.7 x 1013cm2/eV) which was located at 0.85 to 0.88eV above the valence band edge. When the background density of states for a H-passivated interface was subtracted, another peak of lower density (3 x 1012 to 7 x 1012cm2/eV) was observed at 0.25 to 0.33eV above the valence band edge. These results pointed to a common interface state

defect which was present following processes which involved rapid cooling (10 to 100C/s) from 800C or above, in a H-free ambient. This demonstrated that the interface states which were measured following processing, at above 800C, were the net contribution of Pb0/Pb1 Si dangling bond defects for the oxidized Si(100) orientation. An important conclusion was that the primary effect of rapid thermal annealing (600 to 1050C) in N was to cause H desorption from pre-existing Pb0/Pb1 Si dangling bond defects.

Si(100)/SiO2 Interface Properties Following Rapid Thermal Processing. B.J.O’Sullivan, P.K.Hurley, C.Leveugle, J.H.Das: Journal of Applied Physics, 2001, 89[7], 3811-20