By means of the electrical detection of electron paramagnetic resonance, 2 defect centres were identified at the Si(100)/SiO2 interface and in regions that were several μm below the Si surface at low temperatures. Improvements in the measurement technique permitted the experimental detection of the g-factor anisotropy of 2 centres: Pba and Pbb. Both had a [111]-oriented trigonally symmetrical g-tensor, with g|| = 2.0008 and g = 2.0098 and g|| = 1.9974 and g = 2.0160, respectively. The data for the Pba center were very similar to those for the well-known Pb0 center on (100)-oriented Si.

Detection of Two Dangling Bond Centres with Trigonal Symmetry at and below a (100)Si/SiO2 Interface. B.Langhanki, S.Greulich-Weber, J.M.Spaeth, J.Michel: Applied Physics Letters, 2001, 78[23], 3633-5