The dependence of the annealing temperature upon the gettering behavior of O-induced stacking-faults at Si/SiO2 interfaces was investigated. It was noted that the gettering behavior of O-induced stacking-faults had 2 transitional temperatures. The O-induced stacking-faults began to getter in a cross pattern when an SOI structure was annealed at 500C. They formed a circle around the cross pattern at annealing temperatures above 800C. The pattern of gettered O-induced stacking-faults was not affected by the annealing time at annealing temperatures below 800C.

Gettering Phenomenon of Oxidation-Induced Stacking-Faults in Silicon-on-Insulator Structures by Wafer Direct-Bonding Method. K.T.Kim, D.J.Choi: Journal of Materials Science Letters, 2001, 20[3], 245-7