Capacitance-voltage studies were made of Cr-gated metal-oxide-Si structures with thin (3nm) thermal oxides. By using an empirical model, activation energies for passivation of the Pb center were determined. These were found to be dependent upon the charge state of the defect. That is, the defect was passivated more easily if it were positively charged than if it were neutral or negative.

Electrical Characterization of Pb Centres in (100)Si/SiO2 Structures: the Influence of Surface Potential on Passivation during Post-Metallization Anneal. L.A.Ragnarsson, P.Lundgren: Journal of Applied Physics, 2000, 88[2], 938-42