Investigations of oxide charge-trapping and interface state generation, in SiO2 grown onto 6H-SiC, were carried out by using ion-beam induced-charge, electroluminescence and high-frequency capacitance-voltage methods. A large flat-band voltage shift in the capacitance-voltage measurements indicated that high densities of positive charges were trapped near to the interface. These trapped charges were related to defects which existed in the oxide, or which were generated during α-irradiation. The electroluminescence data indicated trap levels at 1.36, 1.6, 2.3 and 2.9eV. The levels at 1.36 and 2.3eV were due to defects which existed in the SiC substrate, while the remaining levels were due to defects in the oxide layer. These defects affected the radiation hardness of SiC electronic devices. Oxide rupture, caused by α-irradiation, was observed.

Ion Beam Induced Charge Gate Rupture of Oxide on 6H-SiC. K.K.Lee, T.Nishijima, T.Ohshima, D.N.Jamieson: Nuclear Instruments and Methods in Physics Research B, 2001, 181[1-4], 324-8