Five electron traps were detected in heavily Si-doped GaAs and in AlxGa1–xAs of low Al content and a Si concentration above 1019/cm3, by using deep-level transient spectroscopy. The traps were investigated as functions of the Si concentration and AlAs mole fraction. They were analyzed with regard to their spectra and concentration, as opposed to previous results which used point defects in the GaAs and AlGaAs. The traps exhibited distinctive features which could be attributed to strong Si-compensation. Three of the traps were confirmed to be DX centers.

Deep Levels in Strongly Si-Compensated GaAs and AlGaAs. T.Sato, T.Ishiwatari: Journal of Applied Physics, 2002, 91[8], 5158-62