The effects of heat treatment upon the quality of AlInP films, grown via metal-organic chemical vapor deposition, were investigated by using deep level transient spectroscopy. Two heat-treatment induced deep levels were observed in samples which had been heat-treated at above 500C, and were attributed to the generation of P vacancies, Vp, by the evaporation of P from the AlInP surface. Examination of these deep levels provided a simple means for monitoring heat-treatment induced behavior.

Thermal-Treatment Induced Deep Electron Traps in AlInP. W.J.Sung, K.F.Huang, W.J.Lin, T.Y.Tseng: Japanese Journal of Applied Physics - 1, 2001, 40[8], 4864-5