Ultrasonically-stimulated changes in electron concentration in n-type CdxHg1-xTe alloys were investigated. It was shown that an ultrasound-induced increase in carrier concentration in n-type CdxHg1-xTe alloys could be related to the activation of donor-like bound defects by acoustic waves. Such effects increased with increasing dislocation and low-angle boundary densities in the crystals.

Sonic-Stimulated Change of the Charge Carrier Concentration in n-CdxHg1-xTe Alloys with Different Initial State of the Defect Structure. R.K.Savkina, O.I.Vlasenko: Physica Status Solidi B, 2002, 229[1], 275-8