A theoretical and experimental investigation was made of deep defects in CdHgTe via the injection-level lifetime spectroscopy of charge carriers. Concentrations, defect energy levels and capture cross-sections for electrons and holes were determined. It was found that the carrier lifetime in films before laser processing deviated from that found theoretically; and this was attributed to the effect of grain boundaries. Agreement of theory with experimentally measured lifetimes was achieved for the films, following laser processing. It was shown that the photoconductivity value at low illumination intensities was defined by majority carriers. The lifetime, determined by photoconductance decay, thus corresponded to majority carriers.

Characterization of Deep Defects in CdxHg1-xTe by Injection-Level Spectroscopy of Carrier Lifetime. V.A.Gnatyuk, S.Z.Karazhanov: Semiconductor Science and Technology, 2002, 17[7], 682-5