Thin films of Cd-rich CdTe, covered with a thin layer of Zn, were prepared by thermal evaporation. The samples were studied after various annealing temperatures and times. Spectral response investigations revealed Zn-atom diffusion into the CdTe films. The Zn diffusion length and the corresponding diffusion coefficient were studied as a function of annealing time. After mild heat treatments (< 100C, < 0.5h), a layer of CdZnTe mixed structure was formed, with a diffusion length of 0.21 to 0.34μm and diffusion coefficients ranging from 1.6 x 10-16 to 10-17m2s-1.

Characterization of a CdZnTe/CdTe Heterostructure System Prepared by Zn Diffusion into a CdTe Thin Film. N.A.Bakr: Journal of Crystal Growth, 2002, 235[1-4], 217-23