Compensating defects were studied, in high-purity Al-doped single crystals, using its photoluminescence at 4.2K and its temperature dependence. The acceptor complex defect, VCd-AlCd, was found to give a bound exciton emission at 1.5848eV, and its related DAP emission at 1.453eV. The bound exciton emission and the DAP emission associated with another complex defect, VCd-2AlCd, were found at 1.5906 and 1.553eV, respectively.

Photoluminescence Study on Compensating Defects in CdTe:Al. S.H.Song, J.Wang, Y.Ishikawa, S.Seto, M.Isshiki: Journal of Crystal Growth, 2002, 237-239, 1726-30