The electrical properties of CdTe and Cd1–xZnxTe crystals, grown under excess Te by using a modified Bridgman technique, depended critically upon the Zn content. Below an x-value of 0.07, the as-grown CdZnTe crystals were n-type while, above this value, they were p-type. A shallow donor level at 0.01eV below the conduction band was attributed to singly-ionized Te antisites. A deep donor level at 0.75eV below the conduction band was therefore attributed to doubly-ionized Te antisites. On the basis of this model, the conduction type of CdZnTe crystals was governed by the results of compensation between the shallow donors of Te antisites and the shallow acceptors of Cd vacancies. High-resistivity Cd0.9Zn0.1Te crystals were produced by compensating the p-type crystals with In impurity at a doping level of only 1015 to 5 x 1015/cm3.

Tellurium Antisites in CdZnTe. M.Chu, S.Terterian, D.Ting, C.C.Wang, H.K.Gurgenian, S.Mesropian: Applied Physics Letters, 2001, 79[17], 2728-30