Lattice defects in bulk single crystals, prepared by using the horizontal Bridgman method under a controlled S vapor pressure, were analyzed. The crystals exhibited p-type

conduction, and electrical resistivities of more than 103Ωcm at room temperature. Measurements of the Hall effect, photoluminescence, optical absorption and photoconductivity showed that the activation energies of acceptors in the crystals were equal to 0.085, 0.115 and 0.36eV, and were attributed to Cu vacancies, In vacancies and extrinsic impurities, respectively. Donors with an activation energy of 0.035eV were attributed to S vacancies.

Defect Properties of CuInS2 Single Crystals Grown by Horizontal Bridgman Method with Controlling S Vapor Pressure. H.Matsushita, T.Mihira, T.Takizawa: Japanese Journal of Applied Physics - 1, 2001, 40[8], 4789-93