The hydrogenation and oxygenation of CuInSe2 were studied by means of X-ray photo-electron spectroscopy in order to investigate defect properties. Initially oxidized p-type material was type-converted by using low-energy H-ion implantation. A defect model was proposed which suggested the reactivation of Se vacancies, VSe, as well as the creation of additional InCu antisites. In the case of cleaved samples, a direct effect of H upon the net donor concentration was assumed. A resultant Cu-depleted surface was attributed to downward band-bending and to the migration of Cu into the bulk under the built-in electric field. Subsequent oxidation led to passivation of the VSe and InCu, and thus led to re-conversion of the conductivity type.

Chemical Defect Explanation for the Effect of Post-Deposition Treatments on CuInSe2. K.Otte, T.Chassé, G.Lippold, B.Rauschenbach, R.Szargan: Journal of Applied Physics, 2002, 91[3], 1624-7