The diffusion of Be was modelled in order to simulate the Be depth profiles which were obtained by secondary ion mass spectrometric measurements of p/p+ and p/p+/p GaAs structures undergoing rapid thermal annealing (850C, 30s). The simulation procedure, which had previously been used to simulate Be and Zn diffusion in GaAs and related compounds, was analyzed critically. It was shown that the usual assumptions did not allow the simulation of measured Be profiles in p/p+/p structures, and that a qualitative agreement between measured and simulated Be profiles could be achieved in both p/p+ and p/p+/p structures by properly considering the initial conditions.

Modelling of Be Diffusion in GaAs Layers Grown by MBE. R.Mosca, P.Bussei, S.Franchi, P.Frigeri, E.Gombia, A.Carnera, M.Peroni: Materials Science and Engineering B, 2002, 91-92, 508-11