The formation and subsequent break-up of a complex containing positively charged muonium and a substitutional ZnGa acceptor, in heavily-doped p-type GaAs:Zn, were detected directly. The Mu+ diffused above 200K, with a hopping-rate of 7.7 x 108/s and an activation energy of 0.15eV. At above 350K, it formed a complex with a trapping radius of 50nm. The Mu-Zn complex broke up above 550K, with a dissociation energy of 0.88eV and pre-factor of 5 x 1012/s. The cyclic reaction, Mu+ ↔ Mu0, occurred above 750K.

Muonium Analogue of Hydrogen Passivation: Observation of the Mu+-Zn– Reaction in GaAs. K.H.Chow, B.Hitti, R.F.Kief, R.L.Lichti, T.L.Estle: Physical Review Letters, 2001, 87[21], 216403 (4pp)