It was shown how a combination of ion-range calculations, and molecular dynamics computer simulations, could be used to predict the atomic-level damage structures which were produced by MeV ions. The results showed that the most damage produced in GaAs, by low-energy self-recoils and 6MeV He ions, was located in clusters and that the majority of isolated defects were interstitials.

Defect Clustering During Ion Irradiation of GaAs - Insight from Molecular Dynamics Simulations. K.Nordlund, J.Peltola, J.Nord, J.Keinonen, R.S.Averback: Journal of Applied Physics, 2001, 90[4], 1710-7