The atom positions and local structure around a perfect dislocation, and the central stacking fault of a Z-shape faulted dipole in deformed material, were analyzed numerically via high-resolution electron microscopic analysis. It was revealed that there existed, around the central stacking fault which connected the 2 stair-rods of the dipole, a local atomic displacement which arose from the original faulting reaction due to the motion of a Shockley dislocation. In addition, the stacking fault was found to be a unique atomic structure due to relaxation, and was different to that of the intrinsic stacking fault of a dissociated dislocation.

Atomic Arrangement of Dislocation Defects in GaAs by HREM. I.Yonenaga, S.H.Lim, C.W.Lee, D.Shindo: Materials Science and Engineering A, 309-310, 125-8