The quantum effects which were characteristic of mesoscopic systems were revealed by a study of the vertical electron transport through GaAs-based heterostructures having a small lattice mismatch. At low temperatures, and under high magnetic fields applied parallel to the axes of misfit dislocations generated at the interface, they were seen as regular conductance fluctuations which were a function of the applied voltage and magnetic field. The fluctuations were interpreted as being caused by the trapping of charge carriers on quasi-stationary orbits; formed around the charged dislocations.

Quantum Effects Associated with Misfit Dislocations in GaAs-Based Heterostructures. T.Wosiński, T.Figielski, A.Mąkosa, W.Dobrowolski, O.Pelya, B.Pécz: Materials Science and Engineering B, 2002, 91-92, 367-70