A review was presented of previous results concerning various aspects of the diffusion of H or D in different types of diamond, such as: undoped type-IIa, undoped chemical vapour deposited layers containing only growth defects, p-type B-doped homo-epitaxially chemical vapour deposited layers, B-ion implanted type-Iia, n-type P-doped homo-epitaxially chemical vapour deposited and N-doped natural type-Ib. The H was introduced by exposing the surface to H plasma or by using ion implantation. Attention was paid to the effect, upon H diffusion, of interactions between H, dopants and defects. The kinetics of (B,H), (P,H) and (N,H) pair formation and dissociation were also considered, as well as modification of the optical and electrical properties as a result of H incorporation and annealing. It was found that, under certain conditions, H diffused into the B-containing layer and passivated B acceptors. No H diffusion was observed in n-type diamonds at up to 1000C. Recent results concerning other aspects that were related to the diffusion of H were presented. These included the influence of ion implantation-related defects upon the diffusion of D. Type-IIa samples, implanted with B or non-dopant ions, were used here. The charge states of H or H-defect complexes were determined as a function of the diamond type via the annealing under bias of deuterated layers. It was shown that the presence of implantation defects retarded D diffusion in a B-implantation doped diamond. This demonstrated that D interacted strongly with defects; thus inhibiting diffusion. The newly-formed complexes degraded the electrical properties and were very stable at up to high temperatures. It was confirmed that, in highly B-doped chemical vapour deposited layers, the H diffused as a positive ion. In lightly B-doped homo-epitaxial layers, the D was incorporated into complexes which seemed to be negatively charged.

Diffusion of Hydrogen in Undoped, p-Type and n-Type Doped Diamonds. C.Saguy, C.Cytermann, B.Fizgeer, V.Richter, Y.Avigal, N.Moriya, R.Kalish, B.Mathieu, A.Deneuville: Diamond and Related Materials, 2003, 12[3-7], 623-31