Monocrystalline type-IIa <100> diamonds were implanted with S, P and Ar ions, under various conditions. The effect of B contamination, which had complicated the interpretation of previous experiments involving S-doping during chemical vapor deposition diamond growth, was excluded here. Shallow (sub-MeV) and deep (MeV) implantation at low (liquid-N), ambient (room temperature) or high (400C) temperatures was used. The implanted samples were subjected to post-implantation annealing at up to 1000C. After each processing step, the samples were subjected to Raman spectroscopy in order to investigate implantation-related residual defects, and to electrical (resistivity, Hall effect) measurements. It was concluded that, although the presence of some residual defects (mainly split interstitials) seemed to accompany the appearance of an S-related electrical activity, the level of the residual damage in S-implanted samples was always less than that in of control (Ar-implanted) samples. The electrical effects due to S-implantation vanished upon annealing at above 800C. No significant difference in the electrical properties of P-implanted and control samples was evident. It was suggested that a S-defect related complex, which decomposed at above 800C, was responsible for the electrical effects in S-implanted diamond.

Electrically Active Sulfur-Defect Complexes in Sulfur-Implanted Diamond. R.Kalish, C.Uzan-Saguy, R.Walker, S.Prawer: Journal of Applied Physics, 2003, 94[6], 3923-30