Fourier-transform photo-current spectroscopy was used as a very sensitive spectroscopic method for detecting shallow and deep impurities (dopants) in chemical vapour deposited layers. A detailed study was made of the effect of experimental conditions (temperature, frequency, electric field, bias light, surface conditions). Residual B contamination was often detected, and P spectra were measured in P-doped epitaxial layers. An anomalous temperature dependence of the defect level with a threshold of about 0.9eV was detected.

Fourier Transform Photocurrent Spectroscopy of Dopants and Defects in CVD Diamond. M.Vanecek, R.Kravets, A.Poruba, J.Rosa, M.Nesladek, S.Koizumi: Diamond and Related Materials, 2003, 12[3-7], 521-5