Stacking faults which contained micro-twins in (111)-oriented diamond layers, grown onto a high-pressure high-temperature synthesized diamond substrate by chemical vapor deposition, began to form only on the substrate. The micro-twins in the stacking faults formed on the {¯111} plane; not on the (111) substrate plane. In order to explain this, an atomic-scale model was proposed in which a foreign atom remained on the high-pressure high-temperature substrate surface and a C atom on the foreign atom could not form a covalent bond with it. Therefore, twinning of the C atom occurred on the {¯111} plane. The next C atoms bonded with the twinned C atom in an untwinned (normal crystalline) relationship. The formation of stacking faults that contained micro-twins thereby occurred.

Formation of Stacking Faults Containing Microtwins in (111) Chemical-Vapor-Deposited Diamond Homoepitaxial Layers. M.Kasu, T.Makimoto, W.Ebert, E.Kohn: Applied Physics Letters, 2003, 83[17], 3465-7