Semi-insulating layers were obtained by the diffusion of V into porous 4H-SiC. The diffusion occurred from films which were deposited by co-sputtering Si and V; with the content of the latter being 20%. The diffusion profile of V in porous SiC exhibited a complex structure, with a fast diffusion coefficient of 7 x 10–15cm2/s. The activation energy of the resistivity of V-diffusion doped porous layers was 1.45eV. The resistivity of V-doped semi-insulating layers was 5 x 1011Ωcm at 500K. This exceeded the resistivity of undoped porous SiC by 2 orders of magnitude. The results indicated that porous SiC was a promising material for semi-insulating substrates in devices based upon wide-bandgap semiconductors.

Semi-Insulating Silicon Carbide Layers Obtained by Diffusion of Vanadium into Porous 4H-SiC. M.G.Mynbaeva, A.A.Lavrentev, N.I.Kuznetsov, A.N.Kuznetsov, K.D.Mynbaev, A.A.Lebedev: Semiconductors, 2003, 37[5], 594-7