It was demonstrated that, by incorporating a thin (~20nm) Si1–yCy (with y as low as 0.1%) layer at the deep In implant end-of-range region, the end-of-range defects and enhanced diffusion behavior associated with In implantation could be eliminated. The Si1–yCy layer was grown epitaxially followed by a Si epitaxy cap of 60nm. Implantation of 115keV In was performed to a dose of 1014/cm2, followed by spike annealing at 1050C. The experimentally observed end-of-range defect and enhanced diffusion elimination were explained on the basis of the undersaturation of implantation-induced Si interstitials with the presence of substitutional C at the Si1–yCy layer.

Influence of Substitutional Carbon Incorporation on Implanted Indium Related Defects and Transient Enhanced Diffusion. C.F.Tan, E.F.Chor, J.Liu, H.Lee, E.Quek, L.Chan: Applied Physics Letters, 2003, 83[20], 4169-71