Deep-level transient spectroscopy was used to assess whether E-beam metal deposition on bulk n-type 6H–SiC produced any changes in the underlying material. Near-surface E-beam-related damage was shown to be device specific. The EB1-related defect at Ec-0.346eV with σna = 5.4 x 10-16cm2 and the EB2-related defect at Ec-0.47eV with σna = 2.2 x 10-15cm2 were detected in several devices, independently of the metal used for deposition. It was shown that the broad EB3 peak, detected in a set of E-beam fabricated devices, corresponds to the p5-related band of interface states also detected in thermally metallized devices. It was shown that neither the EB3 nor the p5 peak could be detected in environmentally aged E-beam fabricated devices. This was attributed to interface state passivation via in-diffusion of atmospheric O.

Defect Introduction during E-Beam Metal Deposition on Bulk n-Type 6H–SiC. E.van Wyk, A.W.R.Leitch: Semiconductor Science and Technology, 2004, 19[5], 610-4