Epilayers of 4H–SiC were implanted with 27Al to doses ranging from 1.3 x 1014/cm2 to 7.8 x 1014/cm2. Dislocation loop formation after high-temperature annealing was studied using plan-view transmission electron microscopy and high-resolution cross-sectional transmission electron microscopy. The total dislocation loop area was found to vary linearly with the implanted dose. For each dose, the total dislocation loop area, reflecting the amount of interstitials bound to loops, remained constant both under prolonged annealing and increasing temperature. The average radius of the dislocation loops simultaneously increased; indicating a process similar to Ostwald ripening.

Dislocation Loop Evolution in Ion Implanted 4H–SiC. P.O.Å.Persson, L.Hultman, M.S.Janson, A.Hallén, R.Yakimova: Journal of Applied Physics, 2003, 93[11], 9395-7