A beam of 4He2+ with an energy of 3MeV was implanted at room temperature into (00▪1)-oriented 6H-SiC single crystal wafers to a fluence of 1017/cm2. The damage induced by the ion implantation was investigated by using cross-sectional transmission electron microscopy. On the basis of these results, cascade defects and He bubbles were observed in the damaged layer at some 7.5 to 7.8μm from the sample surface. Diffraction pattern revealed that the damaged layer was crystalline SiC. The implanted layer consisted of defective crystalline SiC.

Defect Formation in 6H-SiC Irradiated by 3MeV He Ions. M.Sasase, Y.Ito, K.Yasuda, R.Ishigami, S.Hatori, A.Yamamoto: Nuclear Instruments and Methods in Physics Research B, 2003, 209, 179-83