The electrical activation of N and P donors in C/N-, Si/N-, C/P- and Si/P co-implanted and subsequently annealed 4H–SiC samples was investigated by Hall effect. It turns out that doping by co-implantation, which was a process far apart from thermal equilibrium, was different from doping of SiC during growth by the chemical vapor deposition, which was largely governed by the site-competition effect. In case of N and Si co-implantation, the formation of thermally stable and electrically neutral VSi(VC)4 complexes was proposed to serve as a noticeable sink for N atoms. By illumination with photons of different energy, the electrical properties of the dominating intrinsic-related defect centers (E1/E2-/+-, Z1/Z2-/+- and Z1/Z2(3C)) were investigated in 6H–, 4H– and 3C–SiC by deep level transient spectroscopy. In 4H– and 6H–SiC, negative-U-centers were observed. The optical ionization energy of the Z1/Z2-/0-center in 4H–SiC was determined.

Implantation-Induced Defects in Silicon Carbide. G.Pensl, T.Frank, M.Krieger, M.Laube, S.Reshanov, F.Schmid, M.Weidner: Physica B, 2003, 340-342, 121-7