Irradiation in 6H–SiC single crystal wafers was performed at 150 to 550K, using 2.0MeV Au2+ or at 300K using 50keV He+ ions. Additional irradiation of the He+-irradiated specimen was carried out near to room temperature, using 50MeV I10+ ions to about 0.1/nm2. In situ isothermal annealing for 6H–SiC irradiated at 500K to 2.0 Au2+/nm2 was also conducted up to 1.5h at the irradiation temperature. The lattice disorder in the irradiated samples was determined by using either 2.0MeV He+ or 0.94MeV D+ channeling analysis along the <00▪1> axis. Results show that there was a substantial diffusion of the Si defects into a greater depth during the Au2+ irradiation at 500 and 550K. Complete amorphization at 550K did not occur here at up to a maximum fluence of 15 Au2+/nm2. Significant thermal recovery of the Si defects produced at 150K was not observed during subsequent thermal annealing at 500K. Following the I10+ irradiation in the He+-irradiated specimen near to room temperature, remarkable recrystallization at the amorphous–crystalline interfaces around the damage profile was observed.

Ion Beam Analysis of Irradiation Effects in 6H–SiC. W.Jiang, W.J.Weber, Y.Zhang, S.Thevuthasan, V.Shutthanandan: Nuclear Instruments and Methods in Physics Research B, 2003, 207[1], 92-9