Epilayers of 6H and 4H–SiC were implanted with various Al doses to form p-type layers after post-implantation annealing (1700C, 0.5h). Rutherford back-scattering spectrometry in the channeling mode analyses carried out before and after annealing show virgin non-implanted equivalent spectra if the implanted layers were not amorphized. The amorphous layers were recrystallized after annealing with a residual damage level of the lattice relative to the quantity of the dopant implanted. Secondary ion mass spectrometry measurements performed on the implanted samples before and after annealing illustrate a good superposition of the profiles obtained before and after the annealing on non-amorphized samples. Dopant redistribution occurred after annealing, only on amorphized layers, with an intensity that increases with the implanted dose. Deduced from sheet resistance measurements, the dopant activation increases with the implanted dose. Activation of 80%–90% was obtained from capacitance–voltage measurements on samples implanted with a 1013/cm2 total dose.

Effect of Ion Implantation Parameters on Al Dopant Redistribution in SiC after Annealing - Defect Recovery and Electrical Properties of p-Type Layers. M.Lazar, C.Raynaud, D.Planson, J.P.Chante, M.L.Locatelli, L.Ottaviani, P.Godignon: Journal of Applied Physics, 2003, 94[5], 2992-8