A model was proposed in order to explain antiphase domain annihilation in 3C–SiC on Si (001) substrates. The models proposed so far were classified by the planes in which antiphase boundaries propagate. These conventional models were examined from the viewpoint of incorrect-bond sequence contained in antiphase boundaries and clarified the correlation between the elongated direction of antiphase boundaries on initial (001) surfaces and the direction of antiphase boundary propagation along the growth axis. An attempt was made to decide the suitable incorrect-bond sequence to explain antiphase boundary annihilation in 3C–SiC on Si from the surface morphology at initial growth stage, and confirmed the validity of the model by simulation under the restricted condition of layer-by-layer growth. Next, in order to explain the experimental results, the model was extended by considering the existence of steps on the surfaces and the growth modes, and proposed a model. Finally, the validity of the model was proved by the simulation. This demonstrated the capability of the model by applying other systems, e.g., GaAs on Si and GaAs on Ge.

Investigation of Antiphase Domain Annihilation Mechanism in 3C–SiC on Si Substrates. Y.Ishida, T.Takahashi, H.Okumura, S.Yoshida: Journal of Applied Physics, 2003, 94[7], 4676-89