A simple imaging technique using polarized light microscopy was developed to delineate and map the defects in SiC wafers. The correlation of different defects using synchrotron white-beam X-ray topography and polarized light microscopy was established. The previously reported wave-shaped polarized light microscopy features observed using polarized light microscopy were confirmed to be screw dislocations by synchrotron white-beam X-ray topography. Polarized light microscopy could be used for rapid assessment of the quality of SiC substrates and substrates with an epitaxial film.

Extended SiC Defects - Polarized Light Microscopy Delineation and Synchrotron White-Beam X-Ray Topography Ratification. X.Ma, M.Dudley, W.Vetter, T.Sudarshan: Japanese Journal of Applied Physics–2, 2003, 42[9A/B], L1077-9