Screw dislocation, threading edge dislocation and basal plane dislocation in 4H–SiC substrates and epitaxial layers were observed by X-ray topography using synchrotron radiation. Distribution of basal plane dislocation was markedly different between substrates and epitaxial layers. Basal plane dislocations in the substrate were arc-shaped and show no distribution direction. Conversely, those in the epitaxial layer were straight and directed towards the off-orientation. The propagation of dislocations from the substrate to the epitaxial layer could be directly observed. Threading edge dislocations in the substrate were propagated as threading edge dislocations into the epitaxial layer. Basal plane dislocations in the substrate were mostly deflected to threading edge dislocations, and the rest were propagated as basal plane dislocations in the epitaxial layer.

Direct Observation of Dislocations Propagated from 4H–SiC Substrate to Epitaxial Layer by X-Ray Topography. T.Ohno, H.Yamaguchi, S.Kuroda, K.Kojima, T.Suzuki, K.Arai: Journal of Crystal Growth, 2004, 260[1-2], 209-16