The phenomenon of recombination-induced passivation of defects with H was investigated in SiC polytypes. Excitation of the hydrogenated samples with above-band gap light at low temperatures resulted in formation of different non-metastable H-related luminescence centers. Electrical measurements revealed strong recombination-induced passivation of electrical activity of Al and B acceptors in p-type SiC epilayers, which in some cases resulted in inversion of the conductivity type. Athermal migration of H was considered as a possible mechanism for the observed phenomena.

Recombination-Induced Formation of Hydrogen–Defect Complexes in 4H and 6H–SiC - Electrical and Optical Characterization. Y.Koshka, A.Los, M.S.Mazzola, I.Sankin: Physica B, 2003, 340-342, 180-3