The DI low-temperature photoluminescence center was a well-known defect stable up to 1700C annealing in SiC, still its structure was not known after decades of study. Combining experimental and theoretical studies here showed that the properties of an anti-site pair could reproduce the measured one-electron level position and local vibration modes of the DI center and the model was consistent with other experimental findings as well. Theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state were given as a means of confirming the model.

Anti-Site Pair in SiC - a Model of the DI Center. A.Gali, P.Deák, E.Rauls, N.T.Son, I.G.Ivanov, F.H.C.Carlsson, E.Janzén, W.J.Choyke: Physica B, 2003, 340-342, 175-9