Recent results from studies of shallow donors, pseudo-donors, and deep level defects in SiC were presented. The selection rules for transitions between the electronic levels of shallow donors in 4H–SiC in the dipole approximation were derived and the ionization energy for the N donor at hexagonal site was determined. Optical and electrical studies of the DI center reveal the pseudo-donor nature of this defect. Defects in high-purity semi-insulating (SI) SiC substrates including the C vacancy (VC), Si vacancy (VSi), and (VC-CSi) pair were studied. The annealing behavior of these defects and their role in carrier compensation in SI 4H–SiC were discussed.

Defects in SiC. E.Janzén, I.G.Ivanov, N.T.Son, B.Magnusson, Z.Zolnai, A.Henry, J.P.Bergman, L.Storasta, F.Carlsson: Physica B, 2003, 340-342, 15-24