Room-temperature constant photo-current and dark conductivity measurements were used to study the annealing kinetics of light-induced metastable defects in a-Si1-xCx:H (x ≤ 0.11) films. Light-induced metastable defects which were created at room temperature began anneal out at higher temperatures in alloys with high C contents. The annealing activation energy distribution function was found to be a narrow Gaussian which peaked at about 1eV for unalloyed samples. In alloys, the peak position shifted to higher energies with increasing C content. A similarity was identified between the observed increase in dark conductivity and the annealing rate of light-induced defects.

Annealing Behavior of Light-Induced Metastable Defects in a-Si1-xCx:H. A.O.Kodolbasç, O.Oktü: Journal of Materials Science: Materials in Electronics, 2003, 14[10-12], 739-40