Conventional transmission electron microscopy was used to identify crystallographic defects under some so-called device-killing surface morphological faults on an epitaxial film grown onto a 4H-SiC (00▪1) off-cut substrate. The so-called comet fault, composed of a nucleus and a tail, was accompanied by 3C-SiC of zincblende structure. The so-called triangular defect, characterized by its isosceles shape, was associated with stacking faults on the (00▪1)4H plane. Based upon transmission electron microscopic contrast analyses, stacking faults on {111} planes introduced into a 3C-SiC comet fault, and the formation mechanism of triangular defects, were considered.

Crystallographic Defects under Device-Killing Surface Faults in a Homoepitaxially Grown Film of SiC. T.Okada, T.Kimoto, K.Yamai, H.Matsunami, F.Inoko: Materials Science and Engineering A, 2003, 361[1-2], 67-74