Theoretical work on various stacking faults in SiC polytypes was reviewed. Since the discovery of electronic degradation in 4H–SiC p–i–n diodes, stacking faults in SiC had become the subject of intensive study. At the beginning of the present research, the aim had been to find the cause of the degradation but, during the work, more information had been gleaned concerning the general properties of stacking faults in SiC. An intuitive perspective on the diverse nature of stacking faults in SiC was presented.

Stacking Faults in Silicon Carbide. H.P.Iwata, U.Lindefelt, S.Öberg, P.R.Briddon: Physica B, 2003, 340-342, 165-70