Defect structures in (111) 3C-SiC platelets, grown using the Baikov technique, were studied by using synchrotron white-beam X-ray topography and triple-axis diffractometry. The (¯1¯1¯1) facets of the platelets were covered with a lamella of twinned single crystal less than 15μm thick that could be imaged in reflection and transmission X-ray topographs. Rocking curves of the twin lamella were broadened, while X-ray topographs of the bulk matrices of the crystals showed the matrixes were of nearly perfect crystal. Stacking faults on the (111) habit planes were observed in topographs of the bulk of the crystals; these always persisted into the topographs of the twin lamellae. Inclusions occurred near the composition plane of the twin lamellae. Open-ended stacking fault tetrahedra were also noted.

Characterization of Defects in 3C-Silicon Carbide Crystals. W.M.Vetter, M.Dudley: Journal of Crystal Growth, 2004, 260[1-2], 201-8