Wafers and epitaxial layers of 4H–SiC material were analyzed by optical microscopy, profilometer technique and scanning electron microscopy with the aim to evidence the defect morphology on large scale and to determine in both cases the different types of defect. A more detailed analysis was performed by atomic force microscopy. Different types of defects such as micro-pipes, comets, super-dislocations, etch pits and so on, were characterized finding particular physical finger-prints. Electrical characterization performed on Schottky diodes realized on 4H–SiC wafers gave information about the correlation between defects and electrical performances of devices.

Surface Analysis and Defect Characterization of 4H–SiC Wafers for Power Electronic Device Applications. L.Scaltrito, G.Fanchini, S.Porro, M.Cocuzza, F.Giorgis, C.F.Pirri, P.Mandracci, C.Ricciardi, S.Ferrero, C.Sgorlon, G.Richieri, L.Merlin: Diamond and Related Materials, 2003, 12[3-7], 1224-6