The defect structure of SiC/Si layers obtained by carbonization of Si was reported by means of transmission electron microscopy in high-resolution and conventional modes. 3C–SiC was obtained after a rapid thermal annealing treatment and good interfacial quality was reported in terms of small void dimensions and densities. Moreover, high misfit dislocation densities were observed close to the Si/SiC interface and inside the SiC layer without observable generation of threading dislocations. The mosaic grain structure was also evidenced, with low misorientation with respect to the substrate. These results were encouraging for further growth of III–N alloy heterostructures.

SiC Voids, Mosaic Microstructure and Dislocation Distribution in Si Carbonized Layers. F.M.Morales, S.I.Molina, D.Araújo, R.García, V.Cimalla, J.Pezoldt: Diamond and Related Materials, 2003, 12[3-7], 1227-30