Observations were made of a paramagnetic interface defect in thermally oxidized porous n-type doped 4H–SiC/SiO2. Based on its axial symmetry and resolved hyperfine interactions it was attributed to an sp3 carbon dangling bond center situated at the SiC side of the interface. This center was electrically active and pins the Fermi level in the oxidized samples. No Si related paramagnetic dangling bond centers were observed. The formation of dangling bond centers seems to be related to interstitial O diffusion at the interface during the oxidation process.

Identification of the Carbon Dangling Bond Center at the 4H–SiC/SiO2 Interface by an EPR Study in Oxidized Porous SiC. J.L.Cantin, H.J.von Bardeleben, Y.Shishkin, Y.Ke, R.P.Devaty, W.J.Choyke: Physical Review Letters 92[1], 015502 (3pp)