An attempt was made to grow a trapezoidal AlGaN/GaN heterostructures, on a (111)Si substrate, via selective area metalorganic vapor phase epitaxy. On the trapezoidal sample, it was found that the manner of ridge growth was different for GaN growth than for AlGaN growth. By analyzing the thickness and composition, using scanning electron microscopy, reflection electron microscopy and cathode luminescence spectroscopy, the diffusion length of Ga chemical species on the (00▪1) AlGaN surface was determined.

The Surface Diffusion of Ga on an AlGaN/GaN Facet Structure in MOVPE Growth. T.Narita, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki: Physica Status Solidi C, 2003, 0[7], 2154-8