An investigation was made of the effect of post-implantation annealing upon the optical and electrical properties of Si-implanted GaN films. Results from several measurement techniques including room temperature photoluminescence, micro-Raman scattering, high resolution X-ray diffraction and Hall measurement were correlated to study the behavior of damage removal, dopant activation, crystalline quality and residual stress, etc. The Hall measurement demonstrates that a reasonable activation percentage was achieved although there was only partial recovery of the photoluminescence intensity. Raman scattering showed the decrease of stress within the implanted films after thermal annealing. The carrier concentration increases monotonically with increasing annealing temperature up to 1100C, which was in agreement with line-width broadening of near band edge emission in the photoluminescence spectrum. Moreover, systematic measurements imply that the implantation-induced defects, especially point defects, which could play a significant role in either the optical or electrical properties of films, cannot be completely annealed out at 1100C.

Optical and Electrical Characterization of Annealed Silicon-Implanted GaN. H.T.Wang, L.S.Tan, E.F.Chor: Semiconductor Science and Technology, 2004, 19[2], 142-6