The rapid thermal annealing effect upon Be-implanted in situ activated p-type GaN samples was studied and the ramping and isothermal annealing effects of rapid thermal annealing processes were investigated. It was found that the optimum rapid thermal annealing conditions were 1100C and 15s. Furthermore, with equal total isothermal time of 60s, the multiple-step annealing at 1100C for four periods were compared with single-step annealing for one period at the same annealing temperature of 1100C, and observed that the ramping effect with multiple-step annealing could repair Be-related complex defect, and one time, long period isothermal annealing effect with single-step annealing seems to induce much more defect. It seems that the multiple step annealing was more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples.

Effect of Rapid Thermal Annealing on Beryllium-Implanted p-Type GaN. H.W.Huang, C.C.Kao, J.Y.Tsai, C.C.Yu, C.F.Chu, J.Y.Lee, S.Y.Kuo, C.F.Lin, H.C.Kuo, S.C.Wang: Materials Science and Engineering B, 2004, 107[3], 237-40