A Monte Carlo study of 2-dimensional electron gas mobility in wurtzite GaN high electron mobility transistors was presented to include scattering due to edge dislocation strains. For self-consistency, numerical solution of Schrödinger, Poisson, and charge balance equations were used for the eigenfunctions. Electron mobility predictions around 1.71 x 103cm2/Vs, were in close agreement with the reported data. At the highest dislocation density of 1010/cm2, mobility reductions of 16.8% and 8.6% were predicted for 77 and 300K, respectively.

Analysis of Dislocation Scattering on Electron Mobility in GaN High Electron Mobility Transistors. R.P.Joshi, S.Viswanadha, B.Jogai, P.Shah, R.D.del Rosario: Journal of Applied Physics, 2003, 93[12], 10046-52