MOCVD-grown GaN epitaxial layers were studied by using the EBIC and DLTS methods. The local values of diffusion length were determined from the dependence of collected current on beam energy. The deep level transient spectroscopic data were found to correlate with the EBIC results, revealing an increase in the concentration of Ec-0.54eV defects with decreasing the diffusion length and increasing dislocation density.

Correlation of Diffusion Length and Trap Concentration with Dislocation Density in MOCVD-Grown GaN. O.A.Soltanovich, E.B.Yakimov, N.M.Shmidt, A.S.Usikov, W.V.Lundin: Physica B, 2003, 340-342, 479-83