Growth of large and transparent GaN single crystals was carried out by applying the liquid phase epitaxy method in a Ca-Na mixed flux system. It had previously been reported that GaN crystals grown via liquid phase epitaxy had extremely few dislocations and had excellent photoluminescence characteristics. The use here of a Ca-Na mixed flux system permitted the growth of transparent GaN crystals under low N pressures and the further improvement of the photoluminescence characteristic. The dislocation density of this crystal was 2 x 105/cm2 at most.

Growth of Transparent Large Size GaN Single Crystal with Low Dislocations using Ca-Na Flux System. F.Kawamura, T.Iwahashi, M.Morishita, K.Omae, M.Yoshimura, Y.Mori, T.Sasaki: Japanese Journal of Applied Physics-2, 2003, 42[7A], L729-31